cystech electronics corp. spec. no. : c811l3 issued date : 2007.12.27 revised date : page no. : 1/6 BTP955M3 cystek product specification pnp epitaxial planar high curre nt (high performance) transistor BTP955M3 features ? 3 amps continuous current, up to 10 amps peak current ? very low saturation voltage ? excellent gain characteristic s specified up to 3 amps ? extremely low equivalent on resistance, r ce(sat) =75m at 3a ? pb-free package symbol outline BTP955M3 e emitter b base c collector sot-89 b c b c e absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo -180 v collector-emitter voltage v ceo -140 v emitter-base voltage v ebo -7 v continuous collector current i c -3 a peak collector current i cp -10 a base current i b -1 a 0.6 1.5 (note 1) power dissipation pd 2.1 (note 2) w esd susceptibility 4000 (note 3) v operating and storage temperature range tj ; tstg -55 ~ +150 c note : 1. when mounted on fr-4 pcb with area measuring 25251.6 mm 2. when mounted on ceramic with area measuring 50501.6 mm 3. human body model, 1.5k in series with 100pf
cystech electronics corp. spec. no. : c811l3 issued date : 2007.12.27 revised date : page no. : 2/6 BTP955M3 cystek product specification characteristics (ta=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions bv cbo -180 -220 - v i c =-100 a bv cer -180 -220 - v i c =-1 a, r be 1k *bv ceo -140 -170 - v i c =-10ma bv ebo -7 -8.3 - v i e =-100 a i cbo - - -50 na v cb =-150v i cer - - -50 na v ce =-150v, r be 1k i ebo - - -10 na v eb =-6v *v ce(sat) 1 - -30 -60 mv i c =-100ma, i b =-5ma *v ce(sat) 2 - -50 -75 mv i c =-500ma, i b =-50ma *v ce(sat) 3 - -84 -115 mv i c =-1a, i b =-100ma *v ce(sat) 4 - -220 -330 mv i c =-3a, i b =-300ma *v be(sat) - -910 -1010 mv i c =-3a, i b =-300ma *v be(on) - -800 -900 mv v ce =-5v, i c =-3a h fe 1 100 - - - v ce =-5v, i c =-10ma h fe 2 100 - 300 - v ce =-5v, i c =-1a *h fe 3 75 - - - v ce =-5v, i c =-3a *h fe 4 - 10 - - v ce =-5v, i c =-10a f t - 120 - mhz v ce =-10v, i c =-100ma, f=50mhz cob - 35 - pf v cb =-10v, f=1mhz ton 50 ns toff 700 ns i c =-1a, i b 1=-100ma, i b 2=100ma, v cc =-50v *pulse test: pulse width 300 s, duty cycle 2% ordering information device package shipping marking BTP955M3 sot-89 (pb-free) 1000 pcs / tape & reel p955
cystech electronics corp. spec. no. : c811l3 issued date : 2007.12.27 revised date : page no. : 3/6 BTP955M3 cystek product specification characteristic curves current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=1v vce=5v vce=2v saturation voltage vs collector current 1 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) ic=10ib vce(sat) ic=20ib ic=50ib saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbe(sat) @ ic=10ib on vottage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) on voltage---(mv) vbe(on)@vce=5v power derating curve 0 0.5 1 1.5 2 2.5 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) see note 2 on page 1 see note 1 on page 1
cystech electronics corp. spec. no. : c811l3 issued date : 2007.12.27 revised date : page no. : 4/6 BTP955M3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c811l3 issued date : 2007.12.27 revised date : page no. : 5/6 BTP955M3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c811l3 issued date : 2007.12.27 revised date : page no. : 6/6 BTP955M3 cystek product specification sot-89 dimension *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1732 0.1811 4.40 4.60 f 0.0583 0.0598 1.48 1.527 b 0.1594 0.1673 4.05 4.25 g 0. 1165 0.1197 2.96 3.04 c 0.0591 0.0663 1.50 1.70 h 0.0551 0.0630 1.40 1.60 d 0.0945 0.1024 2.40 2.60 i 0.0138 0.0161 0.35 0.41 e 0.01417 0.0201 0.36 e f g c b a i d h 3 2 1 marking: product name month code: 1~9, a,b,c year code : 6 2006, 7 2007,? style: pin 1. base 2. collector 3. emitter 3-lead sot-89 plastic surface mounted package cystek package code: m3 0.51 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: 42 alloy ; solder plating ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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